Device of protection against electrostatic discharges
US11296071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2020 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | Mar 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
Abstract
A device of protection against electrostatic discharges is formed in a semiconductor substrate of a first conductivity type that is coated with a semiconductor layer of a second conductivity type. A buried region of the second conductivity type is positioned at an interface between the semiconductor substrate and the semiconductor layer. First and second wells of the first conductivity type are formed in the semiconductor layer and a region of the second conductivity type is formed in the second well. A stop channel region of the second conductivity type is provided in the semiconductor layer to laterally separating the first well from the second well, where no contact is present between this stop channel region and either of the first and second wells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.