Semiconductor device

US11296076B2 · kind B2 · utility

Assignees

• Kabushiki Kaisha Toshiba · JP
• Toshiba Electronic Devices & Storage Corporation · JP

Inventors

• Ryohei GEJO · Kawasaki, JP
• Tatsunori Sakano · Shinagawa, JP

Key dates

• Filing date: Sep 9, 2020
• Grant date: Apr 5, 2022
• Expiry date: Oct 15, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/83

Abstract

A semiconductor device includes a first electrode on a first surface of a semiconductor part, a second electrode on a second surface opposite to the first surface, and first and second control electrodes in trenches, respectively, at a first surface side. The semiconductor part includes first to sixth layers. The second and third layers of a second conductivity type are selectively provided between the first layer of a first conductivity type and the first electrode. The third layer includes a second conductivity type impurity with a higher concentration than a concentration of a second-conductivity-type impurity in the second layer. The fourth layer of the first conductivity type is selectively provided between the second layer and the first electrode. The fifth layer of the second conductivity type and the sixth layer of the first conductivity type are selectively provided between the first layer and the second electrode.