Nonvolatile memory device and method for fabricating the same
US11296110B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2020 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | Sep 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/697
Abstract
A nonvolatile memory device includes a mold structure including a plurality of insulating patterns and a plurality of gate electrodes alternately stacked on a substrate, a semiconductor pattern penetrating through the mold structure and contacting the substrate, a first charge storage film, and a second charge storage film separated from the first charge storage film. The first and second charge storage films are disposed between each of the gate electrodes and the semiconductor pattern. Each of the gate electrodes includes a first recess and a second recess which are respectively recessed inward from a side surface of the gate electrodes. The first charge storage film fills at least a portion of the first recess, and the second charge storage film fills at least a portion of the second recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.