Bipolar transistor
US11296205B2 · kind B2 · utility
0Cited by
8References
17Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 2, 2019 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | Feb 10, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bipolar transistor includes a collector. The collector is formed by: a first portion of the collector which extends under an insulating trench, and a second portion of the collector which crosses through the insulating trench. The first and second portions of the collector are in physical contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.