Semiconductor device and power conversion device
US11296212B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2019 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | May 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A current switching semiconductor device to be used in a power conversion device achieves both a low conduction loss and a low switching loss. The semiconductor device includes the IGBT in which only Gc gates are provided and an impurity concentration of the p type collector layer is high, and the IGBT in which the Gs gates and the Gc gates are provided and an impurity concentration of the p type collector layer is low. When the semiconductor device is turned off, the semiconductor device transitions from a state in which a voltage lower than a threshold voltage is applied to both the Gs gates and the Gc gates to a state in which a voltage equal to or higher than the threshold voltage is applied to the Gc gates prior to the Gs gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.