Patent · US Active

Surface MESFET

US11296239B2 · kind B2 · utility

0Cited by

8References

10Claims

0Family size

Assignee

EMBERION OY · FI

Inventors

Sami Kallioinen · Espoo, FI
Helena Pohjonen · Espoo, FI

Key dates

Filing date	Mar 14, 2019
Grant date	Apr 5, 2022
Priority date	—
Expiry date	Mar 14, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/62
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A MESFET transistor on a horizontal substrate surface with at least one wiring layer on the substrate surface. The transistor comprises source, drain and gate electrodes which are at least partly covered by a semiconducting channel layer. The source, drain and gate electrodes optionally comprise interface contact materials for changing the junction type between each electrode and the channel. The interface between the source electrode and the channel is an ohmic junction, the interface between the drain electrode and the channel is an ohmic junction, and the interface between the gate electrode and the channel is a Schottky junction. The substrate is a CMOS substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.