Image capturing apparatus including a compound semiconductor layer
US11296245B2 · kind B2 · utility
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5References
10Claims
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Key dates
| Filing date | Dec 11, 2019 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | Jan 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A light receiving element includes a surface recombination prevention layer composed of a first compound semiconductor on which light is incident; a photoelectric conversion layer composed of a second compound semiconductor; and a compound semiconductor layer composed of a third compound semiconductor, the surface recombination prevention layer having a thickness of 30 nm or less. Also, there are provided an image capturing element including the light receiving element, and an image capturing apparatus including the image capturing element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.