Photosensitive device and manufacturing method thereof, detection substrate and array substrate

US11296249B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Tianmin Zhou · Beijing, CN
• Rui Huang · Beijing, CN
• Lizhong Wang · Longbeilingcun, CN
• Jipeng Song · Beijing, CN
• Tao Yang · Beijing, CN
• Zhaohui Qiang · Beijing, CN

Key dates

• Filing date: Mar 9, 2020
• Grant date: Apr 5, 2022
• Expiry date: Apr 10, 2040

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A photosensitive device, a manufacturing method thereof, a detection substrate and an array substrate are provided. The photosensitive device is formed on a substrate, and it includes a photosensitive element and a thin film transistor. The photosensitive element includes a first electrode layer on the substrate; a second electrode layer on a side of the first electrode layer distal to the substrate; and a photoelectric conversion layer between the first electrode layer and the second electrode layer. The thin film transistor is electrically connected to the photosensitive element, and it includes a first gate electrode on the substrate; an active layer on a side of the first gate electrode distal to the substrate; and a second gate electrode on a side of the active layer distal to the substrate. The first electrode layer and the second gate electrode are located in the same layer.