Thin film transistor and method of manufacturing the same and thin film transistor panel and electronic device
US11296289B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2018 |
| Grant date | Apr 5, 2022 |
| Priority date | — |
| Expiry date | Jan 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/6576
Abstract
A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.