Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment
US11301613B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Dec 22, 2020 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Dec 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment are discussed. More particularly, a virtual fabrication environment models, as part of a process sequence, oxidant dispersion in a depth-dependent manner and simulates the subsequent oxidation reaction based on the determined oxidant thickness along an air/silicon interface. Further the virtual fabrication environment performs depth-dependent etch modeling as part of a process sequence to determine etchant concentration and simulate the etching of material along an air/material interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.