Patent · US Active

MTJ stack containing a top magnetic pinned layer having strong perpendicular magnetic anisotropy

US11302372B2 · kind B2 · utility

1Cited by

5References

14Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Seonghoon Woo · Suwon-si, KR
Matthias Georg Gottwald · Leuven, BE

Key dates

Filing date	Feb 7, 2020
Grant date	Apr 12, 2022
Priority date	—
Expiry date	Jul 23, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/85
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A top pinned magnetic tunnel junction (MTJ) stack containing a magnetic pinned layered structure including a second magnetic pinned layer having strong perpendicular magnetic anisotropy (PMA) is provided. In the present application, the magnetic pinned layered structure includes a crystal grain growth controlling layer located between a first magnetic pinned layer having a body centered cubic (BCC) texture and the second magnetic pinned layer. The presence of the crystal grain growth controlling layer facilitates formation of a second magnetic pinned layer having a face centered cubic (FCC) texture or a hexagonal closed packing (HCP) texture which, in turn, promotes strong PMA to the second magnetic pinned layer of the magnetic pinned layered structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.