Methods of exfoliating single crystal materials
US11302531B2 · kind B2 · utility
0Cited by
0References
20Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 26, 2020 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Dec 30, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are methods for exfoliation of single crystals allowing for growth of high crystalline quality on the exfoliated surfaces for III-V photovoltaics. Also disclosed herein are methods for growing GaAs (111) on layered-2D Bi2Se3 (0001) substrates in an MOCVD reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.