Radio frequency power dies having flip-chip architectures and power amplifier modules containing the same
US11302609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2020 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Aug 31, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Radio frequency (RF) power dies having flip-chip architectures are disclosed, as are power amplifier modules (PAMs) containing such RF power dies. Embodiment of the PAM include a module substrate and an RF power die, which is mounted to a surface of the module substrate in an inverted orientation. The RF power die includes, in turn, a die body having a frontside and an opposing backside, a transistor having active regions formed in the die body, and a frontside layer system formed over the die body frontside. The frontside layer system contains patterned metal layers defining first, second, and third branched electrode structures, which are electrically coupled to the active regions of the transistor. A frontside input/output interface is formed in an outer terminal portion of the frontside layer system and contains first, second, and third bond pads electrically coupled to the first, second, and third branched electrode structures, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.