High-voltage circuitry device and ring circuitry layout thereof
US11302686B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2019 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | May 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/813
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high-voltage circuitry device is provided. The high-voltage circuitry device includes a high-voltage transistor, a protection component and a feedback component. The high-voltage transistor has a gate, a drain and a source. The protection component is coupled between the source of the high-voltage transistor and the ground. When a current corresponding to an electrostatic discharge (ESD) event flows through the drain of the high-voltage transistor, the current flows from the drain of the high-voltage transistor to the ground through the high-voltage transistor and the protection component. The feedback component is coupled between the protection component, the ground and the gate of the high-voltage transistor. When the ESD event occurs, the feedback component enables the high-voltage transistor to stay on a turned-on state to pass the current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.