Imaging device and electronic device
US11302736B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2020 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Aug 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/83896
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An imaging device includes a first semiconductor substrate and a second semiconductor substrate. The first semiconductor substrate includes a photoelectric conversion device and a first transistor. The second semiconductor substrate includes a second transistor, a third transistor, and a fourth transistor. One electrode of the photoelectric conversion device is electrically connected to one of a source and a drain of the first transistor. The other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor and a gate of the third transistor. One of a source and a drain of the third transistor is electrically connected to one of a source and a drain of the fourth transistor. The photoelectric conversion device and at least parts of the second transistor, the third transistor, and the fourth transistor overlap with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.