Opto-electronic device having junction field-effect transistor structure and image sensor including the opto-electronic device
US11302740B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2020 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Jul 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1625
Abstract
Provided is an opto-electronic device having low dark noise and a high signal-to-noise ratio. The opto-electronic device may include: a first semiconductor layer doped to have a first conductivity type; a second semiconductor layer disposed on an upper surface of the first semiconductor layer and doped to have a second conductivity type electrically opposite to the first conductivity type; a transparent matrix layer disposed on an upper surface of the second semiconductor layer; a plurality of quantum dots arranged to be in contact with the transparent matrix layer; and a first electrode provided on a first side of the transparent matrix layer and a second electrode provided on a second side of the transparent matrix layer opposite to the first side, wherein the first electrode and the second electrode are electrically connected to the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.