Semiconductor device and manufacturing method therefor
US11302778B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2020 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Jun 3, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
The present disclosure provides a high electron mobility transistor (HEMT). The HEMT includes a substrate, a buffer layer, a channel layer, a barrier layer, a source, a drain, and a gate. The substrate, the buffer layer, the channel layer, the barrier layer, the source, the drain, and the gate are stacked in sequence in a thickness direction of the HEMT. The channel layer includes a doped semiconductor structure. The present disclosure further provides a method for manufacturing an HEMT. The HEMT has good performance and has features such as low drain electric field intensity, a high breakdown voltage, high stability, and low costs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.