Semiconductor device and method of manufacturing the same
US11302788B2 · kind B2 · utility
0Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2019 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Nov 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, comprising: a semiconductor substrate; a source, a gate and a drain fabricated on one side of the semiconductor substrate; a via hole region reserved in the region of the source; and an etching stopping layer made in the via hole region as well as a via hole under the etching stopping layer penetrating through the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.