Thin film transistor and fabrication method thereof, array substrate and fabrication method thereof
US11302822B2 · kind B2 · utility
2Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2019 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Dec 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/126
Abstract
A thin film transistor and a fabrication method thereof, an array substrate and a fabrication method thereof are disclosed. The thin film transistor includes: a base substrate; a gate electrode, an active layer, a source electrode and a drain electrode on the base substrate; and the thin film transistor further includes: a light-shielding portion between the active layer and the base substrate, the light-shielding portion includes a groove, and the active layer is in the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.