Plasmonic field-enhanced photodetector and image sensor using light absorbing layer having split conduction band and valence band
US11302836B2 · kind B2 · utility
3Cited by
14References
15Claims
0Family size
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Key dates
| Filing date | Jul 2, 2020 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Jul 2, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B5/008
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A plasmonic field-enhanced photodetector is disclosed. The photodetector absorbs surface plasmon polaritons (SPPs) by using a light absorbing layer having a conduction band and a valence band in which an energy is split, the SPPs being generated by combining surface plasmons (SPs) with photons of a light wave, and generates photocurrent based on the absorbed SPPs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.