Micro light emitting diode device and manufacturing method thereof
US11302842B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2020 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Aug 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a micro light emitting diode device is provided. A connection layer and a plurality of epitaxial structures are formed on a substrate, wherein the epitaxial structures are separated from each other and relative positions therebetween are fixed via the connection layer. A first pad is formed on each of the epitaxial structures. A plurality of light blocking layers are formed between the epitaxial structures, wherein the light blocking layers and the epitaxial structures are alternately arranged. Each of the epitaxial structures is bonded to a destination substrate after forming the light blocking layers. The substrate is removed to expose the connection layer. A light conversion layer is formed corresponding to each of the epitaxial structures, wherein a width of the light conversion layer is greater than or equal to a distance between any two of the light blocking layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.