Microstrip-to-waveguide transition including a substrate integrated waveguide with a 90 degree bend section
US11303004B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2019 |
| Grant date | Apr 12, 2022 |
| Priority date | — |
| Expiry date | Jan 1, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/17
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A microstrip-to-waveguide transition includes a substrate and a waveguide. The substrate has a metal layer, a ground layer and a dielectric layer disposed between the metal layer and a ground layer. The substrate includes a microstrip line impedance transformer and a substrate integrated waveguide that is electromagnetically coupled to the microstrip line impedance transformer. The substrate integrated waveguide has a 90 degree substrate integrated waveguide bend section at an end portion thereof. The waveguide is arranged perpendicularly relative to the substrate. The waveguide is electromagnetically coupled to the substrate integrated waveguide at the 90 degree substrate integrated waveguide bend section. The microstrip-to-waveguide transition is free of a back-short at a location corresponding to the 90 degree substrate integrated waveguide bend section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.