Spin valve with built-in electric field and spintronic device comprising the same
US11307270B2 · kind B2 · utility
1Cited by
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8Claims
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Key dates
| Filing date | Mar 19, 2020 |
| Grant date | Apr 19, 2022 |
| Priority date | — |
| Expiry date | Aug 3, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Exemplary embodiments of the present disclosure provide a spin valve and a spintronic device comprising the same. The spin valve may comprise two or more magnetic layers stacked in sequence, wherein the spin valve further comprises at least one pair of nonmagnetic semiconductor layers arranged between any two adjacent magnetic layers among the two or more magnetic layers, wherein a built-in electric field is formed between the at least one pair of nonmagnetic semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.