Patent · US Active

Delay locked loop circuit and semiconductor memory device having the same

US11309002B2 · kind B2 · utility

0Cited by
8References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 2, 2020
Grant dateApr 19, 2022
Priority date
Expiry dateDec 2, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2207/2281
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A delay locked loop circuit and a semiconductor memory device are provided. The delay locked loop circuit includes a phase detection and delay control circuit configured to detect a phase difference between a first internally generated clock signal the feedback clock signal to generate a first phase difference detection signal in response to a first selection signal being activated, to detect a phase difference between a second internally generated clock signal and the feedback clock signal to generate a second phase difference detection signal in response to a second selection signal being activated, and to change a code value in response to the first phase difference detection signal or the second phase difference detection signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.