Memory device transmitting small swing data signal and operation method thereof
US11309014B2 · kind B2 · utility
0Cited by
15References
20Claims
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Key dates
| Filing date | Jan 7, 2021 |
| Grant date | Apr 19, 2022 |
| Priority date | — |
| Expiry date | Jan 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06541
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a memory device, which includes a buffer die that outputs a first power supply voltage to a first through-substrate via (e.g., through-silicon via (TSV)) and receives a small swing data signal from a second TSV generated based on the first power supply voltage, and a core die that is electrically connected to the buffer die through the first and second TSVs, includes a first cell capacitor electrically connected to the first TSV and configured to block a first noise introduced to the first power supply voltage received through the first TSV. The core die outputs the small swing data signal to the second TSV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.