Patent · US Active

Memory system that uses NAND flash memory as a memory chip

US11309051B2 · kind B2 · utility

4Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 16, 2020
Grant dateApr 19, 2022
Priority date
Expiry dateOct 15, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2029/1202
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment, a memory system includes: a memory chip including a first memory block and first word lines, the first memory block including a first memory string which includes first memory cells that are coupled in series, the first word lines being respectively coupled to gates of the first memory cells; a memory controller coupled to an external device, controlling the memory chip, and capable of performing an error checking and correcting process of data. When a write instruction is received from the external device, the memory controller is configured to perform a write operation on a second memory cell which is one of the first memory cells, and to perform a read verify operation including a read process and the ECC process on a third memory cell which is one of the first memory cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.