Contact passivation for perovskite optoelectronics

US11309138B2 · kind B2 · utility

Assignee

• The Governing Council of the University of Toronto · CA

Inventors

• Hairen TAN · Toronto, CA
• Xinzheng Lan · Chicago, US
• Zhenyu Yang · 红钢城街道, CN
• Sjoerd HOOGLAND · Toronto, CA
• Edward Hartley Sargent · Toronto, CA

Key dates

• Filing date: Jan 30, 2018
• Grant date: Apr 19, 2022
• Expiry date: Jun 5, 2039

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

Disclosed herein are perovskite based optoelectronic devices made entirely via solution-processing at low temperatures (<150° C.) which provide for simple manufacturing, compatibility with flexible substrates, and perovskite-based tandem devices. These perovskite based optoelectronic devices are produced using an electron transport layer on which the perovskite layer is formed which is passivated using a ligand selected to reduce electron-hole recombination at the interface between the electron transport layer and the perovskite layer.