Sputtering apparatus, sputtering target, and method for forming semiconductor film with the sputtering apparatus
US11309181B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2017 |
| Grant date | Apr 19, 2022 |
| Priority date | — |
| Expiry date | Mar 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a sputtering apparatus capable of forming a semiconductor film in which impurities such as hydrogen or water are reduced. The sputtering apparatus is capable of forming a semiconductor film and includes a deposition chamber, a gas supply device connected to the deposition chamber, a gas refining device connected to the gas supply device, a vacuum pump for evacuating the deposition chamber, a target disposed in the deposition chamber, and a cathode disposed to face the target. The gas supply device is configured to supply at least one of an argon gas, an oxygen gas, and a nitrogen gas. The partial pressure of hydrogen molecules is lower than or equal to 0.01 Pa and the partial pressure of water molecules is lower than or equal to 0.0001 Pa in the deposition chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.