Patent · US Active

Light-emitting diode chip, device, and lamp

US11309297B2 · kind B2 · utility

0Cited by
1References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 17, 2020
Grant dateApr 19, 2022
Priority date
Expiry dateAug 17, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/857
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A light-emitting diode (LED) chip includes a semiconductor epitaxial structure, an insulating substrate, a first metal layer, and a second metal layer. The semiconductor epitaxial structure includes a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, and a light-emitting layer interposed between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer. The insulating substrate has two opposite surfaces, and the first and second metal layers are respectively disposed on the two surfaces of the insulating substrate. An LED device and an LED lamp including the LED chip are also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.