Pseudo Schottky diode
US11309409B2 · kind B2 · utility
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1References
20Claims
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Assignee
Inventor
Key dates
| Filing date | Jun 2, 2020 |
| Grant date | Apr 19, 2022 |
| Priority date | — |
| Expiry date | Jun 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
This disclosure relates to a semiconductor device and corresponding method of manufacturing the semiconductor device. The semiconductor device includes a MOS transistor device die and a SiGe diode. The SiGe diode is integrally arranged on the MOS transistor device die, so that the SiGe diode is electrically connected between a source connection and drain connection of the MOS transistor device die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.