Semiconductor device
US11309416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2017 |
| Grant date | Apr 19, 2022 |
| Priority date | — |
| Expiry date | Dec 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/141
Abstract
A drift layer has a first conductivity type. A well region has a second conductivity type. A well contact region has a resistivity lower than that of the well region. A source contact region is provided on the well region, separated from the drift layer by the well region, and has the first conductivity type. A source resistance region is provided on the well region, separated from the drift layer by the well region, is adjacent to the source contact region, has the first conductivity type, and has a sheet resistance higher than that of the source contact region. A source electrode contacts the source contact region, the well contact region, and the source resistance region, and is continuous with the channel at least through the source resistance region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.