Semiconductor device and fabrication method thereof

US11309420B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Haiyang Zhang · Shanghai, CN
• Bo SU · Shanghai, CN

Key dates

• Filing date: Feb 20, 2020
• Grant date: Apr 19, 2022
• Expiry date: Apr 17, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure provides a semiconductor device and a fabrication method. The method includes: providing a substrate having fins and forming an initial gate structure across the fins, which covers a portion of a top surface and sidewall surfaces of the fins, and includes an initial first region and an initial second region on the initial first region. A bottom boundary of the initial second region is higher than the top surface of the fins, and a size of the initial first region is larger than a size of the initial second region. A first etching process is performed on sidewalls of the initial gate structure to form a gate structure, which includes a first region formed by etching the initial first region, and a second region formed by etching the initial second region. A size of the first region is smaller than a size of the second region.