Transistor and manufacturing method thereof, display substrate and display device

US11309428B2 · kind B2 · utility

Assignees

• HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. · CN
• BOE Technology Group Co., Ltd. · CN

Inventors

• Wei Song · Beijing, CN
• Ce Zhao · Beijing, CN
• Yuankui Ding · Beijing, CN
• Ming Wang · Beijing, CN
• Jun Liu · Tangxia, CN
• Yingbin Hu · Beijing, CN
• Wei Li · Beijing, CN
• Liusong NI · Beijing, CN

Key dates

• Filing date: Dec 6, 2019
• Grant date: Apr 19, 2022
• Expiry date: Dec 24, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K59/1213

Abstract

The present disclosure provides a transistor and a manufacturing method thereof, a display substrate and a display device. The transistor includes: a base structure; an active layer on the base structure; and a gate electrode, a source electrode and a drain electrode that are all located on a side of the active layer distal to the base structure. The active layer includes a first region corresponding to an orthographic projection of the gate electrode on the base structure and a second region outside the orthographic projection. A surface of the base structure in contact with the active layer in the first region is not in the same plane as a surface of the base structure in contact with the active layer in the second region. The active layer in the first region has substantially the same thickness as a thickness of the active layer in the second region.