Patterning method of quantum dot layer, quantum dot device and manufacturing method thereof

US11309452B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Wei He · Beijing, CN
• Xiang Li · San Diego, US
• Huili WU · Beijing, CN
• Shipei Li · Beijing, CN
• Fang He · Beijing, CN
• Renquan Gu · Beijing, CN
• Sheng Xu · Qingdao, CN
• Dongsheng Yin · Beijing, CN
• Xuefei ZHAO · Beijing, CN
• Lizhen Zhang · Nanhu, CN
• Wusheng Li · Shangqiu City, CN
• Qi Yao · Nanhu, CN

Key dates

• Filing date: Oct 14, 2019
• Grant date: Apr 19, 2022
• Expiry date: Oct 14, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8513
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A patterning method of a quantum dot layer, a quantum dot layer pattern, a quantum dot device, a manufacturing method of the quantum dot device, and a display apparatus are provided. The patterning method of the quantum dot layer includes: forming a quantum dot layer, in which the quantum dot layer includes quantum dots and a photoinitiator; irradiating a preset portion of the quantum dot layer by light having a preset wavelength to quench the quantum dots in the preset portion and form a patterned quantum dot layer.