Semiconductor light-emitting element
US11309457B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2017 |
| Grant date | Apr 19, 2022 |
| Priority date | — |
| Expiry date | Apr 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/034
Abstract
Disclosed is a semiconductor light emitting device characterized by being a flip chip including: a plurality of semiconductor layers, which includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers and adapted to generate light by electron-hole recombination; an insulating layer, which is formed on the plurality of semiconductor layers and has openings; and an electrode formed on the insulating layer and electrically connected to the plurality of semiconductor layers through the opening, wherein the electrode has a top face and a bottom face, with the top face having a smaller area than the bottom face.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.