Optoelectronic semiconductor device and method of operating an optoelectronic semiconductor device

US11309459B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Clemens Vierheilig · Tegernheim, DE
• Philipp Kreuter · Teublitz, DE
• Rainer Hartmann · Regensburg, DE
• Michael Binder · Brooklyn, US
• Tobias Meyer · Durham, US

Key dates

• Filing date: Apr 16, 2018
• Grant date: Apr 19, 2022
• Expiry date: Jul 1, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/84

Abstract

An optoelectronic semiconductor device includes a semiconductor layer sequence including an active zone that generates radiation by electroluminescence; a p-electrode and an n-electrode; an electrically insulating passivation layer on side surfaces of the semiconductor layer sequence; and an edge field generating device on the side surfaces on a side of the passivation layer facing away from the semiconductor layer sequence at the active zone, wherein the edge field generating device is configured to generate an electric field at least temporarily in an edge region of the active zone so that, during operation, a current flow through the semiconductor layer sequence is controllable in the edge region.