Surface emitting laser and method of manufacturing the same
US11309686B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2018 |
| Grant date | Apr 19, 2022 |
| Priority date | — |
| Expiry date | Oct 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.