Measurement of device materials using non-Faradaic electrochemical impedance spectroscopy
US11311215B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2019 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Mar 23, 2040 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA61B2562/04
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention includes method and materials designed to measure the material properties (e.g. thickness) of layers of material in a sensor using non-Faradaic EIS (Electrochemical Impedance Spectroscopy) methods. The methods are non-destructive, very sensitive and rapid. Typically in these methods, an AC voltage is applied to the desired material layer while the output current and therefore impedance is measured. This voltage can be applied in multiple frequencies in sweep mode in order to detect both the material and, for example, the thickness of the target material. In this way, EIS allows the characterization of properties of various layers of material disposed in devices such as electrochemical glucose sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.