Fabricating method of semi-polar gallium nitride
US11313038B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2021 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Apr 19, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/406
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating semi-polar gallium nitride includes providing a silicon-on-insulator (SOI) substrate. The SOI substrate includes a substrate, a silicon oxide layer and a silicon substrate. The silicon substrate has (1,0,0) facets. The silicon oxide layer is disposed between the substrate and the silicon substrate. Later, a vapor etching process is performed to etch the (1,0,0) facets to form (1,1,1) facets. The vapor etching process is performed by disposing a nebulizer under the SOI substrate. The top surface of the silicon substrate faces the nebulizer. Later, the nebulizer turns etchant into mist to etch the (1,0,0) facets by the mist to form (1,1,1) facets. Finally, an epitaxial process is performed to grow a semi-polar gallium nitride layer on the (1,1,1) facets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.