Quantum sensor based on rare-earth-ion doped optical crystal and use thereof
US11313925B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2017 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Mar 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1086
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided is a quantum sensor based on a rare-earth-ion doped optical crystal, having: a rare-earth-ion doped optical crystal; a low temperature providing unit, which provides a low temperature operating environment to the rare-earth-ion doped optical crystal; a constant magnetic field generation unit, which applies a constant magnetic field to the rare-earth-ion doped optical crystal; a light field generation unit, which provides a light field performing optical pumping on the rare-earth-ion doped optical crystal to prepare the rare-earth-ions in an initial spin state, and a light field for exciting Raman scattering of the rare-earth-ion doped optical crystal; a pulsed magnetic field generation unit, which applies a pulsed magnetic field perpendicular to the constant magnetic field to the rare-earth-ion doped optical crystal to make the rare-earth-ion doped optical crystal generate a spin echo; and a heterodyne Raman scattering light field detection and analysis unit, which detects and analyzes a Raman scattering light field radiated from the rare-earth-ion doped optical crystal. Further provided are uses of this quantum sensor for magnetic field sensing and electric field sensing …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.