Patent · US Active

Read retry to selectively disable on-die ECC

US11314589B2 · kind B2 · utility

6Cited by
4References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 15, 2020
Grant dateApr 26, 2022
Priority date
Expiry dateMay 15, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/4096
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory device that performs internal ECC (error checking and correction) can selectively return read data with application of the internal ECC or without application of the internal ECC, in response to different read commands from the memory controller. The memory device can normally apply ECC and return corrected data in response to a normal read command. In response to a retry command, the memory device can return the read data without application of the internal ECC.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.