Patent · US Active

Non-volatile memory device

US11315651B1 · kind B1 · utility

0Cited by
12References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 23, 2021
Grant dateApr 26, 2022
Priority date
Expiry dateJun 23, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C16/30
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A non-volatile memory device includes a first and a second memory regions including first and second memory cells and first and second analog circuits, respectively; a control logic circuit determining on/off states of the analog circuits, and converting an external power supply voltage into an internal operating voltage for operation of each of the memory cells; and input/output circuit selecting an input/output memory region for performing input/output of data using the internal operating voltage, wherein input/output of data for the first and second memory cells are sequentially performed, and at least one of the each of the first and second analog circuits are turned on together while the input/output of data for the first memory cells is performed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.