Method of fabricating display substrate, display substrate, and display apparatus
US11315783B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 20, 2019 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Jan 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.