Patent · US Active

Package structure of common-source common-gate gallium nitride field-effect transistor

US11315864B2 · kind B2 · utility

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3Claims

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Assignee

GAN POWER TECHNOLOGY CO., LTD. · TW

Inventors

Tsung Hsien Yen · Taichung, TW
Hsing Yeh Wang · Taichung, TW
Feng Shen · Shanghai, CN

Key dates

Filing date	Jul 20, 2020
Grant date	Apr 26, 2022
Priority date	—
Expiry date	Dec 1, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A package structure of a common-source common-gate gallium nitride field-effect transistor is disclosed, including a lead frame. A gallium nitride field-effect transistor and a metal oxide semiconductor are directly disposed on the lead frame. The gallium nitride field-effect transistor includes a first matrix directly disposed on the lead frame. A first drain, a first gate, and a first source are disposed on a surface side of the first matrix, and the first drain and the first gate are separately electrically connected to the lead frame. The metal oxide semiconductor includes a second matrix directly disposed on the lead frame. A second drain, a second gate, and a second source are disposed on a surface side of the second matrix, the second drain is directly electrically connected to the first source, and the second gate and the second source are separately electrically connected to the lead frame.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.