Semiconductor device
US11315866B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2020 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Jul 3, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a substrate including a main surface; a wiring portion including a first conductive layer formed on the main surface, and a first plating layer which is provided on the first conductive layer and on which an oxide film is formed; a semiconductor element including an element mounting surface and an element electrode formed on the element mounting surface; a bonding portion including a second plating layer made of the same material as the first plating layer and laminated on the first conductive layer, and a solder layer laminated on the second plating layer and bonded to the element electrode; and a sealing resin covering the semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.