Patent · US Active

Semiconductor memory device

US11315950B2 · kind B2 · utility

3Cited by
6References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 15, 2020
Grant dateApr 26, 2022
Priority date
Expiry dateSep 15, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/693

Abstract

A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a surface of the semiconductor substrate, and a plate that is disposed between the plurality of pillars and extends in the same direction as the pillars. A surface of the plate, which faces the pillars, has convex portions and non-convex portions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.