Semiconductor device and method of fabricating the same
US11315951B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2020 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Nov 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate having a first region and a second region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a barrier layer disposed on the semiconductor layer, a first source electrode, a first drain electrode, and a first gate electrode disposed therebetween, which are disposed on the barrier layer in the first region, a second source electrode, a second drain electrode, and a second gate electrode disposed therebetween, which are disposed on the barrier layer in the second region, and a ferroelectric pattern interposed between the first gate electrode and the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.