Field-effect transistor, method for producing same, display element, display device, and system
US11315961B2 · kind B2 · utility
0Cited by
16References
12Claims
0Family size
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Key dates
| Filing date | Mar 15, 2018 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Mar 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/471
Abstract
(Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.