Image sensor and method of manufacturing the same
US11315978B2 · kind B2 · utility
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9References
20Claims
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Key dates
| Filing date | Apr 24, 2020 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Jun 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.