Patent · US Active

Light emitting diode with a patterned scattering layer and fabrication method thereof, display substrate and display panel

US11315982B2 · kind B2 · utility

0Cited by
2References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 5, 2018
Grant dateApr 26, 2022
Priority date
Expiry dateApr 14, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K59/877

Abstract

A light emitting diode includes a pixel unit. The pixel unit may include a first sub-pixel configured to emit white light. The first sub-pixel may include a first microcavity adjustment layer, a scattering layer, a first transparent electrode layer, a first emitting layer, and a first semi-transparent electrode layer. The scattering layer includes a plurality of patterns formed on a surface of the scattering layer. The scattering layer may be configured to reduce color cast of the first sub-pixel to be less than about 0.025 at viewing angles in a range of about −50 degree to +50 degree.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.