Light emitting diode with a patterned scattering layer and fabrication method thereof, display substrate and display panel
US11315982B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2018 |
| Grant date | Apr 26, 2022 |
| Priority date | — |
| Expiry date | Apr 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/877
Abstract
A light emitting diode includes a pixel unit. The pixel unit may include a first sub-pixel configured to emit white light. The first sub-pixel may include a first microcavity adjustment layer, a scattering layer, a first transparent electrode layer, a first emitting layer, and a first semi-transparent electrode layer. The scattering layer includes a plurality of patterns formed on a surface of the scattering layer. The scattering layer may be configured to reduce color cast of the first sub-pixel to be less than about 0.025 at viewing angles in a range of about −50 degree to +50 degree.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.